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IRF1404LPBF
IRF1404LPBF
MOSFETs IRF1404LPBF
Infineon
IRF1404LPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF1404LPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)26
Typical Rise Time (ns)140
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)160
Typical Gate Charge @ Vgs (nC)160@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)72
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)162
Typical Input Capacitance @ Vds (pF)7360@25V
Maximum Drain Source Resistance (MOhm)4@10V
Description
Trans MOSFET N-CH Si 40V 162A 3-Pin(3+Tab) TO-262 Tube
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