Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.82(Max) |
Package Height | 9.02(Max) |
Package Length | 10.66(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Process Technology | HEXFET |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 82 |
Typical Rise Time (ns) | 110 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 230000 |
Typical Gate Charge @ 10V (nC) | 120 |
Typical Gate Charge @ Vgs (nC) | 120@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 18 |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 48 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 150 |
Typical Input Capacitance @ Vds (pF) | 4780@25V |
Maximum Drain Source Resistance (mOhm) | 4.9@10V |
Description |