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IRF3704S
IRF3704S
MOSFETs IRF3704S
Infineon
IRF3704S
--
Diodes, Transistors and Thyristors
MOSFETs
IRF3704S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)5
Typical Rise Time (ns)98
Number of Elements per Chip1
Maximum Power Dissipation (mW)87000
Typical Gate Charge @ Vgs (nC)19@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.4
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)12
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)77
Typical Input Capacitance @ Vds (pF)1996@10V
Maximum Drain Source Resistance (mOhm)9@10V
Description
Trans MOSFET N-CH 20V 77A 3-Pin(2+Tab) D2PAK
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