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IRF3708STRL
IRF3708STRL
MOSFETs IRF3708STRL
Infineon
IRF3708STRL
--
Diodes, Transistors and Thyristors
MOSFETs
IRF3708STRL.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)3.7
Typical Rise Time (ns)50
Number of Elements per Chip1
Maximum Power Dissipation (mW)87000
Typical Gate Charge @ Vgs (nC)24@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)7.2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)17.6
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)62
Typical Input Capacitance @ Vds (pF)2417@15V
Maximum Drain Source Resistance (mOhm)12@10V
Description
Trans MOSFET N-CH 30V 62A 3-Pin(2+Tab) D2PAK T/R
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