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IRF3710S
IRF3710S
MOSFETs IRF3710S
Infineon
IRF3710S
--
Diodes, Transistors and Thyristors
MOSFETs
IRF3710S.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)47
Typical Rise Time (ns)58
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Typical Gate Charge @ 10V (nC)130(Max)
Typical Gate Charge @ Vgs (nC)130(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)45
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)57
Typical Input Capacitance @ Vds (pF)3130@25V
Maximum Drain Source Resistance (mOhm)23@10V
Description
Trans MOSFET N-CH Si 100V 57A 3-Pin(2+Tab) D2PAK T/R
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