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IRF40DM229
IRF40DM229
MOSFETs IRF40DM229
Infineon
IRF40DM229
--
Diodes, Transistors and Thyristors
MOSFETs
IRF40DM229.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4.93
Package Height0.52
Package Length5.5
Product CategoryPower MOSFET
Supplier PackageWDSON
Typical Fall Time (ns)54
Typical Rise Time (ns)66
Number of Elements per Chip1
Maximum Power Dissipation (mW)83000
Typical Gate Charge @ 10V (nC)107
Typical Gate Charge @ Vgs (nC)107@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)54
Maximum Gate Threshold Voltage (V)40
Typical Gate Threshold Voltage (V)10|6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)159
Typical Input Capacitance @ Vds (pF)5317@25V
Maximum Drain Source Resistance (mOhm)1.85@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)159
Description
IRF40DM229 Infineon Technologies AG Transistors MOSFETs N-CH 40V 159A 6-Pin WDSON T/R - Arrow.com
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