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IRF40R207
IRF40R207
MOSFETs IRF40R207
Infineon
IRF40R207
--
Diodes, Transistors and Thyristors
MOSFETs
IRF40R207.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)19
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)83000
Typical Gate Charge @ 10V (nC)45
Typical Gate Charge @ Vgs (nC)45@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.8
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)25
Typical Gate to Drain Charge (nC)15
Maximum Gate Threshold Voltage (V)3.9
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)90
Typical Input Capacitance @ Vds (pF)2110@25V
Maximum Drain Source Resistance (mOhm)5.1@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 40V 90A 3-Pin(2+Tab) DPAK T/R
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