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IRF460
IRF460
MOSFETs IRF460
Infineon
IRF460
--
Diodes, Transistors and Thyristors
MOSFETs
IRF460.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width25.53(Max)
Package Height7.74(Max)
Package Length39.37(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3
Process TechnologyHEXFET
Typical Fall Time (ns)98(Max)
Typical Rise Time (ns)120(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)190(Max)
Typical Gate Charge @ Vgs (nC)190(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35(Max)
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)130(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)21
Typical Input Capacitance @ Vds (pF)4300@25V
Maximum Drain Source Resistance (mOhm)310@10V
Description
Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) TO-3
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