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IRF4905STR
IRF4905STR
MOSFETs IRF4905STR
Infineon
IRF4905STR
--
Diodes, Transistors and Thyristors
MOSFETs
IRF4905STR.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
SVHCYes
EU RoHSNot Compliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyHEXFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)96
Typical Rise Time (ns)99
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)180(Max)
Typical Gate Charge @ Vgs (nC)180(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)61
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)74
Typical Input Capacitance @ Vds (pF)3400@25V
Maximum Drain Source Resistance (mOhm)20@10V
Description
Trans MOSFET P-CH Si 55V 74A 3-Pin(2+Tab) D2PAK T/R
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