Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
SVHC | Yes |
EU RoHS | Not Compliant |
Material | Si |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | HEXFET |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 96 |
Typical Rise Time (ns) | 99 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3800 |
Typical Gate Charge @ 10V (nC) | 180(Max) |
Typical Gate Charge @ Vgs (nC) | 180(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 18 |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 61 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 74 |
Typical Input Capacitance @ Vds (pF) | 3400@25V |
Maximum Drain Source Resistance (mOhm) | 20@10V |
Description |