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IRF5210LPBF
IRF5210LPBF
MOSFETs IRF5210LPBF
Infineon
IRF5210LPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF5210LPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyHEXFET
Standard Package NameI2PAK
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)55
Typical Rise Time (ns)63
Number of Elements per Chip1
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ 10V (nC)150
Typical Gate Charge @ Vgs (nC)150@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)72
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)38
Typical Input Capacitance @ Vds (pF)2780@25V
Maximum Drain Source Resistance (MOhm)60@10V
Description
Trans MOSFET P-CH 100V 38A 3-Pin(3+Tab) TO-262 Tube
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