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IRF5210PBF
IRF5210PBF
MOSFETs IRF5210PBF
Infineon
IRF5210PBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF5210PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)81
Typical Rise Time (ns)86
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Typical Gate Charge @ 10V (nC)180(Max)
Typical Gate Charge @ Vgs (nC)180(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)790
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)6
Typical Turn-Off Delay Time (ns)79
Maximum Diode Forward Voltage (V)1.6
Typical Gate to Drain Charge (nC)97(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)25(Max)
Typical Reverse Recovery Time (ns)170
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)40
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)2700@25V
Typical Reverse Recovery Charge (nC)1200
Maximum Drain Source Resistance (MOhm)60@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)140
Typical Reverse Transfer Capacitance @ Vds (pF)450@25V
Description
Trans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-220AB Tube
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