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IRF5305LPBF
IRF5305LPBF
MOSFETs IRF5305LPBF
Infineon
IRF5305LPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF5305LPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)63
Typical Rise Time (ns)66
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)63(Max)
Typical Gate Charge @ Vgs (nC)63(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)39
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31
Typical Input Capacitance @ Vds (pF)1200@25V
Maximum Drain Source Resistance (mOhm)60@10V
Description
Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-262
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