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IRF540NSPBF
IRF540NSPBF
MOSFETs IRF540NSPBF
Infineon
IRF540NSPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF540NSPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)35
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)130000
Typical Gate Charge @ 10V (nC)71(Max)
Typical Gate Charge @ Vgs (nC)71(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)250
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)4.4
Typical Turn-Off Delay Time (ns)39
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)21(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)14(Max)
Typical Reverse Recovery Time (ns)115
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1960@25V
Typical Reverse Recovery Charge (nC)505
Maximum Drain Source Resistance (MOhm)44@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)110
Typical Reverse Transfer Capacitance @ Vds (pF)40@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH Si 100V 33A 3-Pin(2+Tab) D2PAK Tube
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