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IRF5803TRPBF
IRF5803TRPBF
MOSFETs IRF5803TRPBF
Infineon
IRF5803TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF5803TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.75(Max)
Package Height1.3(Max)
Package Length3(Max)
Product CategoryPower MOSFET
Supplier PackageTSOP
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)50
Typical Rise Time (ns)550
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)93
Typical Turn-On Delay Time (ns)43
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)88
Typical Gate to Drain Charge (nC)3.5
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.4
Typical Input Capacitance @ Vds (pF)1110@25V
Typical Reverse Recovery Charge (nC)34
Maximum Drain Source Resistance (mOhm)112@10V
Description
Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R
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