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IRF630N
IRF630N
MOSFETs IRF630N
Infineon
IRF630N
--
Diodes, Transistors and Thyristors
MOSFETs
IRF630N.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
TabTab
PPAPUnknown
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.69(Max)
Package Height8.77(Max)
Package Length10.54(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)15
Typical Rise Time (ns)14
Number of Elements per Chip1
Maximum Power Dissipation (mW)82000
Typical Gate Charge @ 10V (nC)35(Max)
Typical Gate Charge @ Vgs (nC)35(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.9
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)27
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.3
Typical Input Capacitance @ Vds (pF)575@25V
Maximum Drain Source Resistance (MOhm)300@10V
Description
Trans MOSFET N-CH Si 200V 9.3A Automotive 3-Pin(3+Tab) TO-220AB Tube
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