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IRF6603TR1
IRF6603TR1
MOSFETs IRF6603TR1
Infineon
IRF6603TR1
--
Diodes, Transistors and Thyristors
MOSFETs
IRF6603TR1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeNo Lead
PCB changed7
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain Dual Source
Package Width5.05(Max)
Package Height0.53(Max)
Package Length5.45(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET MT
Process TechnologyHEXFET
Typical Fall Time (ns)71
Typical Rise Time (ns)9.9
Number of Elements per Chip1
Maximum Power Dissipation (mW)3600
Typical Gate Charge @ Vgs (nC)48@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)27
Typical Input Capacitance @ Vds (pF)6590@15V
Maximum Drain Source Resistance (MOhm)3.4@10V
Description
Trans MOSFET N-CH Si 30V 27A 7-Pin Direct-FET MT T/R
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