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IRF6614TRPBF
IRF6614TRPBF
MOSFETs IRF6614TRPBF
Infineon
IRF6614TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF6614TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeNo Lead
PCB changed7
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain Dual Source
Package Width3.95(Max)
Package Height0.53(Max)
Package Length3.95(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET ST
Process TechnologyDirectFET
Typical Fall Time (ns)3.6
Typical Rise Time (ns)27
Typical Switch Charge (nC)7.4
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ Vgs (nC)19@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)370
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)18
Typical Gate to Drain Charge (nC)6
Maximum Gate Threshold Voltage (V)2.25
Typical Gate Threshold Voltage (V)4.5|10
Typical Gate to Source Charge (nC)5.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)12.7
Typical Input Capacitance @ Vds (pF)2560@20V
Typical Reverse Recovery Charge (nC)5.5
Maximum Drain Source Resistance (MOhm)8.3@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)12.7 (Ta)|55 (Tc)
Description
IRF6614TRPBF Infineon Technologies AG Transistors MOSFETs N-CH Si 40V 12.7A 7-Pin Direct-FET ST T/R Si - Arrow.com
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