Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 7 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 7 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Dual Source |
Package Width | 5.05(Max) |
Package Height | 0.53(Max) |
Package Length | 5.45(Max) |
Product Category | Power MOSFET |
Supplier Package | Direct-FET MX |
Process Technology | DirectFET |
Typical Fall Time (ns) | 4.4 |
Typical Rise Time (ns) | 19 |
Typical Switch Charge (nC) | 12 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2800 |
Typical Gate Charge @ Vgs (nC) | 29@4.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 560 |
Typical Turn-On Delay Time (ns) | 15 |
Maximum Drain Source Voltage (V) | 40 |
Typical Turn-Off Delay Time (ns) | 21 |
Typical Gate to Drain Charge (nC) | 9.4 |
Maximum Gate Threshold Voltage (V) | 2.25 |
Typical Gate to Source Charge (nC) | 8.6 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 19 |
Typical Input Capacitance @ Vds (pF) | 3765@20V |
Typical Reverse Recovery Charge (nC) | 33 |
Maximum Drain Source Resistance (MOhm) | 5@10V |
Description |