Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 7 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 7 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Dual Source |
Package Width | 3.95(Max) |
Package Height | 0.53(Max) |
Package Length | 3.95(Max) |
Product Category | Power MOSFET |
Supplier Package | Direct-FET ST |
Process Technology | DirectFET |
Typical Fall Time (ns) | 4.5 |
Typical Rise Time (ns) | 40 |
Typical Switch Charge (nC) | 5.2 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1400 |
Typical Gate Charge @ Vgs (nC) | 11@4.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 630 |
Typical Turn-On Delay Time (ns) | 9.7 |
Maximum Drain Source Voltage (V) | 20 |
Typical Turn-Off Delay Time (ns) | 12 |
Typical Gate to Drain Charge (nC) | 4 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Typical Gate Threshold Voltage (V) | 10|4.5 |
Typical Gate to Source Charge (nC) | 3.3 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 16 |
Typical Input Capacitance @ Vds (pF) | 1360@10V |
Typical Reverse Recovery Charge (nC) | 12 |
Maximum Drain Source Resistance (mOhm) | 5.7@10V |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 55 (Tc)|16 (Ta) |
Description |