Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Pin Count | 7 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 7 |
Part Status | Unconfirmed |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Dual Source |
Package Width | 3.95(Max) |
Package Height | 0.53(Max) |
Package Length | 3.95(Max) |
Product Category | Power MOSFET |
Supplier Package | Direct-FET SJ |
Maximum IDSS (uA) | 20 |
Process Technology | DirectFET |
Typical Fall Time (ns) | 5.1 |
Typical Rise Time (ns) | 5 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2200 |
Typical Gate Charge @ 10V (nC) | 14 |
Typical Gate Charge @ Vgs (nC) | 14@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 9.2 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 18 |
Maximum Gate Threshold Voltage (V) | 4.9 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 5.7 |
Typical Input Capacitance @ Vds (pF) | 890@25V |
Maximum Drain Source Resistance (mOhm) | 35@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |