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IRF6674TRPBF
IRF6674TRPBF
MOSFETs IRF6674TRPBF
Infineon
IRF6674TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF6674TRPBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeNo Lead
PCB changed7
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Dual Source
Package Width5.05(Max)
Package Height0.53(Max)
Package Length5.45(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET MZ
Process TechnologyDirectFET
Standard Package NameDirect-FET
Typical Fall Time (ns)8.7
Typical Rise Time (ns)12
Typical Switch Charge (nC)10.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)3600
Typical Gate Charge @ 10V (nC)24
Typical Gate Charge @ Vgs (nC)24@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1580
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)12
Typical Gate to Drain Charge (nC)8.3
Maximum Gate Threshold Voltage (V)4.9
Typical Gate to Source Charge (nC)5.4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)13.4
Typical Input Capacitance @ Vds (pF)1350@25V
Typical Reverse Recovery Charge (nC)36
Maximum Drain Source Resistance (mOhm)11@10V
Description
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R
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