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MOSFETs IRF6710S2TR1PBF
Infineon
IRF6710S2TR1PBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain |
| Package Width | 3.95(Max) |
| Package Height | 0.49(Max) |
| Package Length | 3.95(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Direct-FET S1 |
| Process Technology | DirectFET |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 20 |
| Typical Switch Charge (nC) | 4.3 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1800 |
| Typical Gate Charge @ Vgs (nC) | 8.8@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 320 |
| Typical Turn-On Delay Time (ns) | 7.9 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 5.2 |
| Typical Gate to Drain Charge (nC) | 3 |
| Maximum Gate Threshold Voltage (V) | 2.4 |
| Typical Gate to Source Charge (nC) | 2.3 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Typical Input Capacitance @ Vds (pF) | 1190@13V |
| Typical Reverse Recovery Charge (nC) | 8 |
| Maximum Drain Source Resistance (MOhm) | 5.9@10V |
| Description |
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