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IRF6810STRPBF
IRF6810STRPBF
MOSFETs IRF6810STRPBF
Infineon
IRF6810STRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width3.95(Max)
Package Height0.49(Max)
Package Length3.95(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET S1
Maximum IDSS (uA)1
Process TechnologyDirectFET
Typical Fall Time (ns)4.8
Typical Rise Time (ns)22
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ Vgs (nC)7.4@4.5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)8.2
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)11
Maximum Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)1038@13V
Maximum Drain Source Resistance (mOhm)5.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 25V 16A 6-Pin Direct-FET S1 T/R
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