Product Attribute | Attribute Value |
HTS | 8542330001 |
PPAP | No |
EU RoHS | Not Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 25 |
Typical Rise Time (ns) | 8 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ 10V (nC) | 12 |
Typical Gate Charge @ Vgs (nC) | 12@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 140 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Drain Source Voltage (V) | 50 |
Typical Turn-Off Delay Time (ns) | 45 |
Typical Gate to Drain Charge (nC) | 3.5 |
Maximum Gate Threshold Voltage (V) | 3 |
Typical Gate to Source Charge (nC) | 1.2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3 |
Typical Input Capacitance @ Vds (pF) | 290@25V |
Typical Reverse Recovery Charge (nC) | 110 |
Maximum Drain Source Resistance (MOhm) | 130@10V |
Description |