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IRF7314TRPBF
IRF7314TRPBF
MOSFETs IRF7314TRPBF
Infineon
IRF7314TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7314TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)49
Typical Rise Time (ns)40
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)19@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)470
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.8
Typical Turn-Off Delay Time (ns)42
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.78
Typical Gate to Drain Charge (nC)7.7
Maximum Gate Threshold Voltage (V)0.7(Min)
Minimum Gate Threshold Voltage (V)0.7
Typical Gate to Source Charge (nC)4
Typical Reverse Recovery Time (ns)47
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.3
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)780@15V
Typical Reverse Recovery Charge (nC)49
Maximum Drain Source Resistance (mOhm)58@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)21
Maximum Power Dissipation on PCB @ TC=25°C (W)2
Typical Reverse Transfer Capacitance @ Vds (pF)240@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)5.3
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62.5
Description
Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC N T/R
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