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IRF7324TRPBF
IRF7324TRPBF
MOSFETs IRF7324TRPBF
Infineon
IRF7324TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7324TRPBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)190
Typical Rise Time (ns)36
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)42@5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)630
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)170
Typical Gate to Drain Charge (nC)12
Maximum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)7.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)2940@15V
Typical Reverse Recovery Charge (nC)300
Maximum Drain Source Resistance (MOhm)18@4.5V
Description
Trans MOSFET P-CH Si 20V 9A 8-Pin SOIC T/R
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