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IRF7329PBF
IRF7329PBF
MOSFETs IRF7329PBF
Infineon
IRF7329PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7329PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)260
Typical Rise Time (ns)8.6
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)38@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)1000
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)340
Typical Gate to Drain Charge (nC)8.1
Maximum Gate Threshold Voltage (V)0.9
Typical Gate to Source Charge (nC)6.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.2
Typical Input Capacitance @ Vds (pF)3450@10V
Typical Reverse Recovery Charge (nC)48
Maximum Drain Source Resistance (MOhm)17@4.5V
Description
Trans MOSFET P-CH Si 12V 9.2A 8-Pin SOIC Tube
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