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IRF7338PBF
IRF7338PBF
MOSFETs IRF7338PBF
Infineon
IRF7338PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7338PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)34@N Channel|25@P Channel
Typical Rise Time (ns)7.6@N Channel|13@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)8.6(Max)@4.5V@N Channel|6.6(Max)@4.5V@P Channel
Maximum Gate Source Voltage (V)±12@N Channel|±8@P Channel
Typical Turn-On Delay Time (ns)6@N Channel|9.6@P Channel
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)27@P Channel|26@N Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3@P Channel|6.3@N Channel
Typical Input Capacitance @ Vds (pF)640@9V@N Channel|490@9V@P Channel
Maximum Drain Source Resistance (mOhm)150@4.5V@P Channel|34@4.5V@N Channel
Description
Trans MOSFET N/P-CH Si 12V 6.3A/3A 8-Pin SOIC
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