Product Attribute | Attribute Value |
PPAP | No |
Material | Si |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Dual Dual Drain |
Product Category | Power MOSFET |
Process Technology | HEXFET |
Typical Fall Time (ns) | 22 |
Typical Rise Time (ns) | 10 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ 10V (nC) | 26 |
Typical Gate Charge @ Vgs (nC) | 26@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 14 |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 43 |
Maximum Gate Threshold Voltage (V) | 1(Min) |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3.4 |
Typical Input Capacitance @ Vds (pF) | 690@25V |
Maximum Drain Source Resistance (mOhm) | 105@10V |
Description |