Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P|N |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 22@P Channel|13@N Channel |
Typical Rise Time (ns) | 10@P Channel|3.2@N Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ 10V (nC) | 26@P Channel|24@N Channel |
Typical Gate Charge @ Vgs (nC) | 26@10V@P Channel|24@10V@N Channel |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 14@P Channel|8.3@N Channel |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 43@P Channel|32@N Channel |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.7@N Channel|3.4@P Channel |
Typical Input Capacitance @ Vds (pF) | 690@25V@P Channel|740@25V@N Channel |
Maximum Drain Source Resistance (MOhm) | 105@10V@P Channel|50@10V@N Channel |
Description |