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IRF7410TRPBF
IRF7410TRPBF
MOSFETs IRF7410TRPBF
Infineon
IRF7410TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7410TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)200
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)91@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)2344
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)271
Typical Gate to Drain Charge (nC)25
Maximum Gate Threshold Voltage (V)0.9
Typical Gate to Source Charge (nC)18
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)8676@10V
Typical Reverse Recovery Charge (nC)134000
Maximum Drain Source Resistance (mOhm)7@4.5V
Description
Trans MOSFET P-CH Si 12V 16A 8-Pin SOIC T/R
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