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IRF7478
IRF7478
MOSFETs IRF7478
Infineon
IRF7478
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Diodes, Transistors and Thyristors
MOSFETs
IRF7478.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)13
Typical Rise Time (ns)2.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)21@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1590
Typical Turn-On Delay Time (ns)7.7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)44
Typical Gate to Drain Charge (nC)9.6
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)4.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)1740@25V
Typical Reverse Recovery Charge (nC)100
Maximum Drain Source Resistance (MOhm)26@10V
Description
Trans MOSFET N-CH 60V 7A 8-Pin SOIC N T/R
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