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IRF7501TR
IRF7501TR
MOSFETs IRF7501TR
Infineon
IRF7501TR
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7501TR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width3
Package Height0.86
Package Length3
Product CategoryPower MOSFET
Supplier PackageMicro
Process TechnologyHEXFET
Typical Fall Time (ns)16
Typical Rise Time (ns)24
Number of Elements per Chip2
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ Vgs (nC)5.3@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)130
Typical Turn-On Delay Time (ns)5.7
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)15
Typical Gate to Drain Charge (nC)2.2
Maximum Gate Threshold Voltage (V)0.7(Min)
Typical Gate to Source Charge (nC)0.84
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.4
Typical Input Capacitance @ Vds (pF)260@15V
Typical Reverse Recovery Charge (nC)37
Maximum Drain Source Resistance (mOhm)135@4.5V
Description
Trans MOSFET N-CH Si 20V 2.4A 8-Pin Micro T/R
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