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IRF7663TRPBF
IRF7663TRPBF
MOSFETs IRF7663TRPBF
Infineon
IRF7663TRPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF7663TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3
Package Height0.86
Package Length3
Product CategoryPower MOSFET
Supplier PackageMicro
Process TechnologyHEXFET
Typical Fall Time (ns)172
Typical Rise Time (ns)100
Number of Elements per Chip1
Maximum Power Dissipation (mW)1800
Typical Gate Charge @ Vgs (nC)30@5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)615
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)125
Typical Gate to Drain Charge (nC)7
Maximum Gate Threshold Voltage (V)1.2
Typical Gate to Source Charge (nC)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.2
Typical Input Capacitance @ Vds (pF)2520@10V
Typical Reverse Recovery Charge (nC)50
Maximum Drain Source Resistance (mOhm)20@4.5V
Description
Trans MOSFET P-CH Si 20V 8.2A 8-Pin Micro T/R
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