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IRF7779L2TRPBF
IRF7779L2TRPBF
MOSFETs IRF7779L2TRPBF
Infineon
IRF7779L2TRPBF
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count15
AutomotiveNo
Lead ShapeNo Lead
PCB changed15
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Octal Source Hex Drain
Package Width9.15(Max)
Package Height0.49(Max)
Package Length7.1(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET L8
Maximum IDSS (uA)20
Process TechnologyDirectFET
Typical Fall Time (ns)12
Typical Rise Time (ns)19
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)97
Typical Gate Charge @ Vgs (nC)97@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)36
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)67
Typical Input Capacitance @ Vds (pF)6660@25V
Maximum Drain Source Resistance (mOhm)11@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R
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