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IRF7807VD1PBF
IRF7807VD1PBF
MOSFETs IRF7807VD1PBF
Infineon
IRF7807VD1PBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Standard Package NameSOP
Typical Fall Time (ns)2.2
Typical Rise Time (ns)1.2
Typical Switch Charge (nC)3.4
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)9.5@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.3
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)11
Typical Gate to Drain Charge (nC)2.4
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.3
Typical Reverse Recovery Charge (nC)51
Maximum Drain Source Resistance (mOhm)25@4.5V
Description
Trans MOSFET N-CH Si 30V 8.3A 8-Pin SOIC Tube
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