PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 13 |
Typical Rise Time (ns) | 6.7 |
Typical Switch Charge (nC) | 14.9 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 2.4 |
Maximum Power Dissipation (mW) | 2500 |
Typical Gate Charge @ Vgs (nC) | 34@4.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 990 |
Typical Turn-On Delay Time (ns) | 12 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 2.8 |
Typical Turn-Off Delay Time (ns) | 21 |
Maximum Diode Forward Voltage (V) | 1 |
Typical Gate to Drain Charge (nC) | 12 |
Maximum Gate Threshold Voltage (V) | 2.32 |
Minimum Gate Threshold Voltage (V) | 1.39 |
Typical Gate to Source Charge (nC) | 8.6 |
Typical Reverse Recovery Time (ns) | 41 |
Maximum Operating Temperature (°C) | 155 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 20 |
Operating Junction Temperature (°C) | -55 to 155 |
Typical Input Capacitance @ Vds (pF) | 4310@15V |
Typical Reverse Recovery Charge (nC) | 39 |
Maximum Drain Source Resistance (mOhm) | 4@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 160 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 450@15V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
Description | |