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IRF7832TRPBF
IRF7832TRPBF
MOSFETs IRF7832TRPBF
Infineon
IRF7832TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7832TRPBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)13
Typical Rise Time (ns)6.7
Typical Switch Charge (nC)14.9
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)2.4
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)34@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)990
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.8
Typical Turn-Off Delay Time (ns)21
Maximum Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)12
Maximum Gate Threshold Voltage (V)2.32
Minimum Gate Threshold Voltage (V)1.39
Typical Gate to Source Charge (nC)8.6
Typical Reverse Recovery Time (ns)41
Maximum Operating Temperature (°C)155
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Operating Junction Temperature (°C)-55 to 155
Typical Input Capacitance @ Vds (pF)4310@15V
Typical Reverse Recovery Charge (nC)39
Maximum Drain Source Resistance (MOhm)4@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)160
Typical Reverse Transfer Capacitance @ Vds (pF)450@15V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R
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