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IRF7901D1PBF
IRF7901D1PBF
MOSFETs IRF7901D1PBF
Infineon
IRF7901D1PBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF7901D1PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Standard Package NameSOP
Typical Fall Time (ns)8@Q 1|5.2@Q 2
Typical Rise Time (ns)16.4@Q 2|13.8@Q 1
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)7.6@5V@Q 1|15.5@5V@Q 2
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.2@Q 1|10.4@Q 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)14.7@Q 1|14.6@Q 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.2
Typical Input Capacitance @ Vds (pF)780@16V@Q 1|1810@16V@Q 2
Maximum Drain Source Resistance (MOhm)38@4.5V@Q 1|32@4.5V@Q 2
Description
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC
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