Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 3.4@Q 1|3.3@Q 2 |
Typical Rise Time (ns) | 8.2@Q 1|8.6@Q 2 |
Typical Switch Charge (nC) | 2.3@Q 1|3.1@Q 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 1400@Q 1|2000@Q 2 |
Typical Gate Charge @ Vgs (nC) | 4.6@4.5V@Q 1|6.5@4.5V@Q 2 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 130@Q 1|190@Q 2 |
Typical Turn-On Delay Time (ns) | 7.4@Q 1|6.1@Q 2 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 8.4@Q 1|8.2@Q 2 |
Typical Gate to Drain Charge (nC) | 1.8@Q 1|2.3@Q 2 |
Maximum Gate Threshold Voltage (V) | 2.25 |
Typical Gate to Source Charge (nC) | 0.9@Q 1|1.4@Q 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 6.4@Q 1|9.7@Q 2 |
Typical Input Capacitance @ Vds (pF) | 580@15V@Q 1|900@15V@Q 2 |
Typical Reverse Recovery Charge (nC) | 1.5@Q 1|3.1@Q 2 |
Maximum Drain Source Resistance (MOhm) | 22.6@10V@Q 1|14.4@10V@Q 2 |
Description |