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IRF8010LPBF
IRF8010LPBF
MOSFETs IRF8010LPBF
Infineon
IRF8010LPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF8010LPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.69(Max)
Package Height10.54(Max)
Package Length10.54(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)120
Typical Rise Time (ns)130
Number of Elements per Chip1
Maximum Power Dissipation (mW)260000
Typical Gate Charge @ 10V (nC)81
Typical Gate Charge @ Vgs (nC)81@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)61
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)3830@25V
Maximum Drain Source Resistance (mOhm)15@10V
Description
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262
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