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IRF830PBF
IRF830PBF
MOSFETs IRF830PBF
Infineon
IRF830PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF830PBF.pdf
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)25
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)16
Typical Rise Time (ns)16
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)2.7
Minimum Gate Resistance (Ohm)0.5
Maximum Power Dissipation (mW)74000
Typical Gate Charge @ 10V (nC)38(Max)
Typical Gate Charge @ Vgs (nC)38(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)160
Typical Turn-On Delay Time (ns)8.2
Maximum Drain Source Voltage (V)500
Typical Gate Plateau Voltage (V)5.8
Typical Turn-Off Delay Time (ns)42
Maximum Diode Forward Voltage (V)1.6
Typical Gate to Drain Charge (nC)22(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)5(Max)
Typical Reverse Recovery Time (ns)320
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)610@25V
Typical Reverse Recovery Charge (nC)1000
Maximum Drain Source Resistance (MOhm)1500@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)18
Typical Reverse Transfer Capacitance @ Vds (pF)68@25V
Description
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220-1
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