Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Not Compliant |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.82(Max) |
Package Height | 9.27(Max) |
Package Length | 10.29(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Maximum IDSS (uA) | 250 |
Process Technology | TMOS |
Standard Package Name | TO-220 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 30(Max) |
Typical Rise Time (ns) | 15(Max) |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 125000 |
Typical Gate Charge @ 10V (nC) | 40 |
Typical Gate Charge @ Vgs (nC) | 40@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 35(Max) |
Maximum Drain Source Voltage (V) | 500 |
Typical Turn-Off Delay Time (ns) | 90(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 8 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 1225@25V |
Maximum Drain Source Resistance (mOhm) | 850@10V |
Maximum Gate Source Leakage Current (nA) | 500 |
Description |