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IRF9317TRPBF
IRF9317TRPBF
MOSFETs IRF9317TRPBF
Infineon
IRF9317TRPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF9317TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.99(Max)
Package Height1.57(Max)
Package Length4.98(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)120
Typical Rise Time (ns)64
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)61
Typical Gate Charge @ Vgs (nC)31@4.5V|61@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)160
Typical Gate to Drain Charge (nC)14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)2820@15V
Maximum Drain Source Resistance (MOhm)6.6@10V
Description
Trans MOSFET P-CH 30V 16A 8-Pin SOIC N T/R
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