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IRF9321TRPBF
IRF9321TRPBF
MOSFETs IRF9321TRPBF
Infineon
IRF9321TRPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF9321TRPBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.99(Max)
Package Height1.5(Max)
Package Length5.05(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)145
Typical Rise Time (ns)79
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)65
Typical Gate Charge @ Vgs (nC)34@4.5V|65@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)590
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)185
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)16
Maximum Gate Threshold Voltage (V)2.4
Minimum Gate Threshold Voltage (V)1.3
Typical Gate Threshold Voltage (V)1.8
Typical Gate to Source Charge (nC)10
Typical Reverse Recovery Time (ns)38
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)15
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)2590@25V
Typical Reverse Recovery Charge (nC)24
Maximum Drain Source Resistance (mOhm)7.2@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)120
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Typical Reverse Transfer Capacitance @ Vds (pF)360@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET P-CH 30V 15A 8-Pin SOIC T/R
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