HTS | 8541.10.00.80 |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant with Exemption |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 3 |
Automotive | No |
PCB changed | 2 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Package Width | 9.65(Max) |
Package Height | 4.83(Max) |
Package Length | 10.41(Max) |
Product Category | Power MOSFET |
Supplier Package | D2PAK |
Maximum IDSS (uA) | 100 |
Standard Package Name | TO-263 |
Typical Fall Time (ns) | 39 |
Typical Rise Time (ns) | 52 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 3.3 |
Minimum Gate Resistance (Ohm) | 0.4 |
Maximum Power Dissipation (mW) | 3700 |
Typical Gate Charge @ 10V (nC) | 38(Max) |
Typical Gate Charge @ Vgs (nC) | 38(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 340 |
Typical Turn-On Delay Time (ns) | 12 |
Maximum Drain Source Voltage (V) | 100 |
Typical Gate Plateau Voltage (V) | 6.8 |
Typical Turn-Off Delay Time (ns) | 31 |
Maximum Diode Forward Voltage (V) | 6.3 |
Typical Gate to Drain Charge (nC) | 21(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 6.8(Max) |
Typical Reverse Recovery Time (ns) | 120 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 12 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 860@25V |
Typical Reverse Recovery Charge (nC) | 460 |
Maximum Drain Source Resistance (mOhm) | 300@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 48 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 93@25V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
Description | |