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IRF9910TRPBF
IRF9910TRPBF
MOSFETs IRF9910TRPBF
Infineon
IRF9910TRPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF9910TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)4.5@Q 1|7.5@Q 2
Typical Rise Time (ns)10@Q 1|14@Q 2
Typical Switch Charge (nC)3.4@Q 1|6.8@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)7.4@4.5V@Q 1|15@4.5V@Q 2
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)290@Q 1|600@Q 2
Typical Turn-On Delay Time (ns)6.3@Q 1|8.3@Q 2
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)9.2@Q 1|15@Q 2
Typical Gate to Drain Charge (nC)2.5@Q 1|5.4@Q 2
Maximum Gate Threshold Voltage (V)2.55
Typical Gate to Source Charge (nC)2.6@Q 1|4.3@Q 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10@Q 1|12@Q 2
Typical Input Capacitance @ Vds (pF)900@10V@Q 1|1860@10V@Q 2
Typical Reverse Recovery Charge (nC)3.1@Q 1|4.9@Q 2
Maximum Drain Source Resistance (mOhm)13.4@10V@Q 1|9.3@10V@Q 2
Description
Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC N T/R
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