Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | NRND |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 4.5@Q 1|7.5@Q 2 |
Typical Rise Time (ns) | 10@Q 1|14@Q 2 |
Typical Switch Charge (nC) | 3.4@Q 1|6.8@Q 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ Vgs (nC) | 7.4@4.5V@Q 1|15@4.5V@Q 2 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 290@Q 1|600@Q 2 |
Typical Turn-On Delay Time (ns) | 6.3@Q 1|8.3@Q 2 |
Maximum Drain Source Voltage (V) | 20 |
Typical Turn-Off Delay Time (ns) | 9.2@Q 1|15@Q 2 |
Typical Gate to Drain Charge (nC) | 2.5@Q 1|5.4@Q 2 |
Maximum Gate Threshold Voltage (V) | 2.55 |
Typical Gate to Source Charge (nC) | 2.6@Q 1|4.3@Q 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 10@Q 1|12@Q 2 |
Typical Input Capacitance @ Vds (pF) | 900@10V@Q 1|1860@10V@Q 2 |
Typical Reverse Recovery Charge (nC) | 3.1@Q 1|4.9@Q 2 |
Maximum Drain Source Resistance (mOhm) | 13.4@10V@Q 1|9.3@10V@Q 2 |
Description |