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IRF9Z34NPBF
IRF9Z34NPBF
MOSFETs IRF9Z34NPBF
Infineon
IRF9Z34NPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF9Z34NPBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)41
Typical Rise Time (ns)55
Number of Elements per Chip1
Maximum Power Dissipation (mW)68000
Typical Gate Charge @ 10V (nC)35(Max)
Typical Gate Charge @ Vgs (nC)35(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)30
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)620@25V
Maximum Drain Source Resistance (MOhm)100@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH Si 55V 19A 3-Pin(3+Tab) TO-220AB Tube
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