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IRF9Z34NSPBF
IRF9Z34NSPBF
MOSFETs IRF9Z34NSPBF
Infineon
IRF9Z34NSPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF9Z34NSPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyHEXFET
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)41
Typical Rise Time (ns)55
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)35(Max)
Typical Gate Charge @ Vgs (nC)35(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)280
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)30
Typical Gate to Drain Charge (nC)16(Max)
Maximum Gate Threshold Voltage (V)4
Typical Gate to Source Charge (nC)7.9(Max)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)620@25V
Typical Reverse Recovery Charge (nC)110
Maximum Drain Source Resistance (MOhm)100@10V
Description
Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK Tube
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