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IRF9Z34SPBF
IRF9Z34SPBF
MOSFETs IRF9Z34SPBF
Vishay
IRF9Z34SPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF9Z34SPBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)100
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)58
Typical Rise Time (ns)120
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3.9
Minimum Gate Resistance (Ohm)0.7
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ 10V (nC)34(Max)
Typical Gate Charge @ Vgs (nC)34(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)620
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)6.5
Typical Turn-Off Delay Time (ns)20
Maximum Diode Forward Voltage (V)6.3
Typical Gate to Drain Charge (nC)16(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)9.9(Max)
Typical Reverse Recovery Time (ns)100
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1100@25V
Typical Reverse Recovery Charge (nC)280
Maximum Drain Source Resistance (mOhm)140@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)72
Maximum Power Dissipation on PCB @ TC=25°C (W)3.7
Typical Reverse Transfer Capacitance @ Vds (pF)100@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK
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